国家/地区 美国（8） 日本（7） 中国（6） 韩国（6） 世界知识产权组织（6） 欧洲专利局（EPO）（5） 印度（3）
IPC部 H（12） C（5） B（4）
IPC大类 H01（12）
IPC小类 H01L（8） C01B（4） H01B（3）
B82B（2） B82Y（2） C04B（2）
C08J（2） C08K（2） C08L（2）
C09C（2） H01M（2）
IPC C01B031/04（4） C01B031/00（3） B82B003/00（2）
B82Y030/00（2） B82Y040/00（2） C08J003/215（2）
C08K003/04（2） C08K007/24（2） C08K009/00（2）
C08L101/00（2） C09C001/46（2） H01L029/786（2）
发明人 ADAMSON D（2） ADAMSON D H（2） AKSAY I（2）
AKSAY I A（2） OZBAS B（2） PRUD APOS HOMME R K（2）
PRUD H R K（2） PRUD HOMME R（2） PRUD HOMME R K（2）
PRUDHOMME R（2） PRUDHOMME R K（2） REGISTER R（2）
REGISTER R A（2）
公开年 2008（12）
申请年 2007（8）  2008（4） 
专利权人 UNIV PRINCET.（2）

Charge detector using graphene, has area source and drain region which are respectively formed in sides of charged couple device (CCD) providing with barriers.

CHUNG H J, JUNG R J, KIM D C, LEE C W, SEO S A

Flexible cadmium telluride thin film solar battery structure comprises graphene that is adhered on polyimide thin film, cadmium telluride and indium tin oxide deposited on graphene, indium welded on graphene, and connection wire.

LEI Z, ZHANG J, FENG L, LI W, LI B, WU L, CAI Y

Gas diffusion barrier useful for e.g. packaging material automotive applications, comprises a polymer matrix; and a functional graphene which displays no signature of graphite and graphite oxide, as determined by X-ray diffraction.

PRUDHOMME R K, ONEIL C D, OZBAS B, AKSAY I A, REGISTER R A, ADAMSON D H, PRUD HOMME R K, ADAMSON D, AKSAY I, ONEIL C, PRUDHOMME R, REGISTER R, O NEIL C D, PRUD H R K, PRUD HOMME R, O NEIL C, PRUD APOS HOMME R K

Spintronic device e.g. spintronic polarizer for (re-)writable microchips and processors, comprises graphene sheet for affecting electrical signal based on induced magnetic field effect, and at least two electrode terminals.

ZALIZNYAK I, TSVELIK A, KHARZEEV D

Article for thermal management in electronic device comprises non-woven aggregate of nano-scaled graphene platelets of specific thickness to form electrical network of platelets in contact with other platelets to form conductive pathways.

JANG B Z, ZHAMU A, GUO J

Photovoltaic cell for producing electricity comprises contacts with electrically conductive materials, and graphite stack comprising vertically stacked semiconducting graphene sheets, where junctions form holes.

LAGALLY M, LIU F

Semiconductor device such as complementary metal oxide semiconductor, has channel layer which consist of semiconductor graphene, wiring containing source, drain and electrode layer of gate and gate-electrode layer.

HIURA H, NIHEI F, TADA T, KANAYAMA T

Graphene transistor e.g. FET for high frequencies, has gate electrode that is formed while forming source electrode in one edge, and drain electrode on other edge of insulator.

HIROSE S, IWAI D

Anisotropic semiconductor film for microelectronics, optics, communication and computer technology, has solid layer containing material having predominantly planar graphene-like carbon-based structures and preset thickness.

LAZAREV P, LAZAREV P I

Polymer composition used for functional graphene sheet, contains polymer matrix which comprises elastomer, and functional graphene which displays no signature of graphite and/or its oxide, as determined by X-ray diffraction.

PRUDHOMME R K, OZBAS B, AKSAY I A, REGISTER R A, ADAMSON D H, PRUD HOMME R K, ADAMSON D, AKSAY I, PRUDHOMME R, REGISTER R, PRUD H R K, PRUD HOMME R, PRUD A H R K, PRUD APOS HOMME R K